advanced power n-channel enhancement mode electronics corp. power mosfet fast switching performance bv dss 60v single drive requirement r ds(on) 80m full isolation package i d 14a description absolute maximum ratings symbol units v ds v v gs v i d @t c =25 a i d @t c =100 a i dm a p d @t c =25 w t stg t j symbol value units rthj-c maximum thermal resistance, junction-case 5.0 /w rthj-a maximum thermal resistance, junction-ambient 65 /w data and specifications subject to change without notice thermal data parameter storage temperature range total power dissipation 25 -55 to 150 operating junction temperature range -55 to 150 continuous drain current, v gs @ 10v 9 pulsed drain current 1 40 parameter rating drain-source voltage 60 gate-source voltage 20 continuous drain current, v gs @ 10v 201210072 rohs-compliant product 1 AP9973GI 14 g d s advanced power mosfets from apec provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. the to-220cfm isolation package is widely preferred for commercial- industrial through hole applications. g d s to-220cfm(i)
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =250ua 60 - - v r ds(on) static drain-source on-resistance 2 v gs =10v, i d =9a - - 80 m v gs =4.5v, i d =6a - - 100 m v gs(th) gate threshold voltage v ds =v gs , i d =250ua 1 - 3 v g fs forward transconductance v ds =10v, i d =9a - 8.6 - s i dss drain-source leakage current v ds =60v, v gs =0v - - 1 ua drain-source leakage current (t j =150 o c) v ds =48v ,v gs =0v - - 25 ua i gss gate-source leakage v gs =20v - - 100 na q g total gate charge 2 i d =9a - 8 13 nc q gs gate-source charge v ds =48v - 3 - nc q gd gate-drain ("miller") charge v gs =4.5v - 4 - nc t d(on) turn-on delay time 2 v ds =30v - 7 - ns t r rise time i d =9a - 15 - ns t d(off) turn-off delay time r g =3.3 ? v gs =10v - 16 - ns t f fall time r d =3.3 -3- ns c iss input capacitance v gs =0v - 720 1150 pf c oss output capacitance v ds =25v - 77 - pf c rss reverse transfer capacitance f=1.0mhz - 45 - pf source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =14a, v gs =0v - - 1.2 v t rr reverse recovery time 2 i s =9a, v gs =0 v , - 28 - ns q rr reverse recovery charge di/dt=100a/s - 27 - nc notes: 1.pulse width limited by max. junction temperature. 2.pulse test this product is an electrostatic sensitive, please handle with caution. device or system are not authorized. 2 AP9973GI this product has been qualified for consumer market. applications or uses as criterial component in life support
AP9973GI fig 1. typical output characteristics fig 2. typical output characteristics ??? t rr q rr fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature fig 5. forward characteristic of fig 6. gate threshold voltage v.s. reverse diode junction temperature 3 60 70 80 90 246810 v gs , gate-to-source voltage (v) r ds(on) (m ) i d =9a t c =25 o c 0 10 20 30 40 0123456 v ds , drain-to-source voltage (v) i d , drain current (a) v g =3.0v t c =25 o c 10v 7.0v 5.0v 4.5v 0 10 20 30 0123456 v ds , drain-to-source voltage (v) i d , drain current (a) t c =150 o c v g =3.0v 10v 7.0v 5.0v 4.5v 0.4 0.8 1.2 1.6 2.0 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) v g =10v i d =9a 0 4 8 12 16 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 v sd , source-to-drain voltage (v) i s (a) t j =25 o c t j =150 o c 0.8 1 1.2 1.4 1.6 1.8 2 -50 0 50 100 150 t j ,junction temperature ( o c) v gs(th) (v)
fig 7. gate charge characteristics fig 8. typical capacitance characteristics ??? t rr q rr fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. switching time waveform fig 12. gate charge waveform 4 AP9973GI 10 100 1000 10000 1 5 9 13 17 21 25 29 v ds , drain-to-source voltage (v) c (pf) f=1.0mhz c iss c rss c oss t d(on) t r t d(off) t f v ds v gs 10% 90% q v g 4.5v q gs q gd q g charge 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 t , pulse width (s) normalized thermal response (r thjc ) p dm duty factor = t/t peak t j = p dm x r thjc + t c t t 0.02 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse 0.1 1 10 100 0.1 1 10 100 v ds , drain-to-source voltage (v) i d (a) t c =25 o c single pulse 100us 1ms 10ms 100ms 1s dc 0 2 4 6 8 10 12 0 4 8 12 16 q g , total gate charge (nc) v gs , gate to source voltage (v) v ds =30v v ds =38v v ds =48v i d =9a
package outline : to-220cfm millimeters min nom max a 4.50 4.70 4.90 a1 2.30 2.65 3.00 b 0.50 0.70 0.90 b1 0.95 1.20 1.50 c 0.45 0.65 0.80 c2 2.30 2.60 2.90 e 9.70 10.00 10.40 l3 2.91 3.41 3.91 l4 14.70 15.40 16.10 ---- 3.20 ---- e ---- 2.54 ---- 1.all dimensions are in millimeters. 2.dimension does not include mold protrusions. part marking information & packing : to-220cfm symbols advanced power electronics corp. package code 9973gi part number logo date code (ywwsss) y last digit of the year ww week sss sequence ywwsss logo a1 a c e b b1 e l4 c2 a1 a c e b b1 e l4 c2 l3 meet rohs requirement 5
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